ds30125 rev. 7 - 2 1 of 4 MMDT2222A www.diodes.com diodes incorporated epitaxial planar die construction complementary pnp type available (mmdt2907a) ultra-small surface mount package also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 2 c 2 b 1 b 1 e 1 e 1 e 2 e 2 b 2 b 2 c 1 c 1 mechanical data case: sot-363, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 terminal connections: see diagram marking (see page 2): k1p ordering & date code information: see page 2 weight: 0.006 grams (approx.) MMDT2222A dual npn small signal surface mount transistor characteristic symbol MMDT2222A unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 600 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. maximum combined dissipation. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm
ds30125 rev. 7 - 2 2 of 4 MMDT2222A www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 75 v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 10 na a v cb = 60v, i e = 0 v cb = 60v, i e = 0, t a = 150 c collector cutoff current i cex 10 na v ce = 60v, v eb(off) = 3.0v emitter cutoff current i ebo 10 na v eb = 3.0v, i c = 0 base cutoff current i bl 20 na v ce = 60v, v eb(off) = 3.0v on characteristics (note 3) dc current gain h fe 35 50 75 100 40 50 35 300 i c = 100 a, v ce = 10v i c = 1.0ma, v ce = 10v i c = 10ma, v ce = 10v i c = 150ma, v ce = 10v i c = 500ma, v ce = 10v i c = 10ma, v ce = 10v, t a = -55 c i c = 150ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.6 1.2 2.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8pf v cb = 10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?25pf v eb = 0.5v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 300 mhz v ce = 20v, i c = 20ma, f = 100mhz noise figure nf 4.0 db v ce = 10v, i c = 100 a, r s = 1.0k f = 1.0khz switching characteristics delay time t d 10 ns v cc = 30v, i c = 150ma, v be(off) = - 0.5v, i b1 = 15ma rise time t r 25 ns storage time t s 225 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma fall time t f 60 ns ordering information (note 4) device packaging shipping MMDT2222A-7 sot-363 3000/tape & reel notes: 3. short duration test pulse used to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number a bove. example: bas40-06t-7-f. marking information k1p ym k1p ym k1p = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30125 rev. 7 - 2 3 of 4 MMDT2222A www.diodes.com 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 2 typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v=1.0v ce 1.0 5.0 20 10 30 0.1 10 1.0 50 capacitance (pf) reverse volts (v) fig. 3 typical capacitance cobo cibo 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 i , base current (ma) b fi g .4 t y pical collector saturation re g ion v , collector-emitter voltage (v) ce i = 1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c
ds30125 rev. 7 - 2 4 of 4 MMDT2222A www.diodes.com 1 10 100 1000 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 5 collector emitter saturation voltage vs. collector current t=25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i c i b =10 1 0.1 10 100 v , base emitter v o ltage (v) be(on) i , collector current (ma) c fig. 6 base emitter voltage vs. collector current 0.2 0.3 0.4 0.6 0.5 0.8 0.7 1.0 0.9 v=5v ce t = 25c a t = -50c a t = 150c a 1 10 100 1000 1 10 100 i , collector current (ma) c fig. 7 gain bandwidth product vs. collector current f , gain bandwidth pr o duct (mhz) t v=5v ce
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